Possible Kondo insulating behaviour in U2Ru2Sn

被引：19

作者：

Menon, L ^{[1
]}

du Plessis, PD ^{[1
]}

Strydom, AM ^{[1
]}

机构：

[1] Univ Witwatersrand, Dept Phys, ZA-2050 Johannesburg, South Africa

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 106卷 / 08期

关键词：

Kondo effects; valence fluctuations; electronic transport;

D O I：

10.1016/S0038-1098(98)00071-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The compound U2Ru2Sn is known to crystallize in the tetragonal U3Si2-type structure and is believed to be a weak paramagnet. We report electrical resistivity studies on this compound which seem to indicate semiconducting behaviour at low temperatures and hence a gap formation in this compound. This is evidenced from a sharp rise in the resistivity seen at low temperatures similar to that observed in the so-called Kondo insulators. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：519 / 521

页数：3

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