The study of the origin of the anomalously large thermoelectric power of Si/Ge superlattice thin film

被引：35

作者：

Uchino, H ^{[1
]}

Okamoto, Y ^{[1
]}

Kawahara, T ^{[1
]}

Morimoto, J ^{[1
]}

机构：

[1] Natl Def Acad, Dept Mat Sci & Engn, Yokosuka, Kanagawa 2398686, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 4A期

关键词：

thermoelectrics; superlattice; power factor; SiGe; thin film; amorphous Ge;

D O I：

10.1143/JJAP.39.1675

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the experimental framework Tor the origin of the anomalously large thermoelectric power for Si and Au-doped Ge superlattice thin film. The thermoelectric power of the sample still remains anomalously large even though the superlattice structure begins to collapse. An amorphous Ge thin film displays large thermoelectric power. The crystallized samples have almost the same thermoelectric power as that of conventional SiGe bulk samples. The main cause of this anomalously large thermoelectric power of Si/Ge superlattice thin films is amorphous Ge layer.

引用

页码：1675 / 1677

页数：3

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