Ambipolar field-effect transistors based on poly(3-hexylthiophene)/fullerene derivative bilayer films

被引：13

作者：

Kaneto, Keiichi ^{[1
]}

Yano, Makoto ^{[1
]}

Shibao, Miho ^{[1
]}

Morita, Takeomi ^{[1
]}

Takashima, Wataru ^{[1
]}

机构：

[1] Kyushu Inst Technol, Grad Sch Life Sci & Syst Engn, Wakamatsu Ku, Kitakyushu, Fukuoka 8080196, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 4A期

关键词：

FET; poly(3-hexylthiophene); fullerene derivatives; PCBM; bilayer film; ambipolar transport;

D O I：

10.1143/JJAP.46.1736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Field-effect transistors (FETs) based on poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C-61-butyric methyl ester (PCBM) films have been studied for various structures with metal electrodes on a SiO2/Si substrate. The pressure dependence of transport characteristics in P3HT FET during evacuation was measured. It was found that hole mobility is independent of atmospheric pressure, whereas hole density decreases significantly with evacuation. FET characteristics in various configurations (top and bottom) of contact with Au and Al were examined in P3HT and PCBM films. The results indicate that bottom contact with An gives better performance for bilayer FETs. Ambipolar transport was observed for the bilayer structure of PCBM (upper)/P3HT (lower)/Au (bottom contact).

引用

收藏

页码：1736 / 1738

页数：3

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