Electrothermal simulation of 4H-SiC power devices

被引：9

作者：

Wright, NG ^{[1
]}

Morrison, DJ ^{[1
]}

Johnson, CM ^{[1
]}

O'Neill, AG ^{[1
]}

机构：

[1] Univ Newcastle Upon Tyne, Dept Elect & Elect Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

electrothermal simulation; UMOS; switching comparison;

D O I：

10.4028/www.scientific.net/MSF.264-268.917

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Technology Computer Aided Design (TCAD) models for electrothermal simulation of 4H-SiC devices are presented. The developed models are then used to show that: (1) local heating effects in the highly resistive channels of UMOS devices are not significant and (2) 4H-SiC vertical power MESFETs should have significantly superior snitching speeds than equivalent Silicon devices.

引用

页码：917 / 920

页数：4

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