CARRIER MOBILITIES IN SILICON SEMI-EMPIRICALLY RELATED TO TEMPERATURE, DOPING AND INJECTION LEVEL

被引：170

作者：

DORKEL, JM ^{[1
]}

LETURCQ, P ^{[1
]}

机构：

[1] INST NATL SCI APPL,F-31400 TOULOUSE,FRANCE

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 09期

关键词：

D O I：

10.1016/0038-1101(81)90097-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：821 / 825

页数：5

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