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RECOMBINATION IN THE END REGIONS OF PIN DIODES
被引:43
作者
:
BERZ, F
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Laboratories, Redhill
BERZ, F
COOPER, RW
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Laboratories, Redhill
COOPER, RW
FAGG, S
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Laboratories, Redhill
FAGG, S
机构
:
[1]
Philips Research Laboratories, Redhill
来源
:
SOLID-STATE ELECTRONICS
|
1979年
/ 22卷
/ 03期
关键词
:
D O I
:
10.1016/0038-1101(79)90039-X
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
The recombination currents in the end regions of pin diodes have been investigated by means of an IR absorption technique. The diodes had graded doping profiles in the end regions, and a wide base (374 μm). It has been found experimentally that over a wide range of currents the recombination is proportional to the square of the injected carrier density at the junctions, which justifies the use of constant h parameters to characterise the recombination. Models of Shockley-Read recombination centres in the end regions are described, which give good agreement with experimental results. © 1979.
引用
收藏
页码:293 / 301
页数:9
相关论文
共 22 条
[1]
AUGER-RECOMBINATION IN SI
BECK, JD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,PHYS INST,STUTTGART 1,WEST GERMANY
UNIV STUTTGART,PHYS INST,STUTTGART 1,WEST GERMANY
BECK, JD
CONRADT, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,PHYS INST,STUTTGART 1,WEST GERMANY
UNIV STUTTGART,PHYS INST,STUTTGART 1,WEST GERMANY
CONRADT, R
[J].
SOLID STATE COMMUNICATIONS,
1973,
13
(01)
: 93
-
95
[2]
SIMPLIFIED THEORY OF P-I-N-DIODE
BERZ, F
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
MULLARD RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
BERZ, F
[J].
SOLID-STATE ELECTRONICS,
1977,
20
(08)
: 709
-
714
[3]
BROOKS H, 1955, ADV ELECTRONICS ELEC, V7
[4]
RECOMBINATION IN THYRISTORS AND RECTIFIERS FROM SILICON - ITS EFFECT ON POROSITY FACTOR AND LIBERATION TIME RELATION
BURTSCHER, J
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,FRANKFURTER RING 152,8 MUNICH 46,FED REP GER
SIEMENS AG,FRANKFURTER RING 152,8 MUNICH 46,FED REP GER
BURTSCHER, J
DANNHAUSER, F
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,FRANKFURTER RING 152,8 MUNICH 46,FED REP GER
SIEMENS AG,FRANKFURTER RING 152,8 MUNICH 46,FED REP GER
DANNHAUSER, F
KRAUSSE, J
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,FRANKFURTER RING 152,8 MUNICH 46,FED REP GER
SIEMENS AG,FRANKFURTER RING 152,8 MUNICH 46,FED REP GER
KRAUSSE, J
[J].
SOLID-STATE ELECTRONICS,
1975,
18
(01)
: 35
-
63
[5]
CHOO SC, 1972, IEEE T ELECTRON DEV, VED19, P954
[6]
ANALYTICAL APPROXIMATIONS FOR DIFFUSED JUNCTIONS UNDER HIGH-LEVEL CONDITIONS
CHOO, SC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SINGAPORE,DEPT ELECT ENGN,SINGAPORE,SINGAPORE
CHOO, SC
YAMASAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SINGAPORE,DEPT ELECT ENGN,SINGAPORE,SINGAPORE
YAMASAKI, H
[J].
SOLID-STATE ELECTRONICS,
1976,
19
(09)
: 769
-
776
[7]
THEORY OF A FORWARD-BIASED DIFFUSED-JUNCTION P-L-N RECTIFIER .2. ANALYTICAL APPROXIMATIONS
CHOO, SC
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE RES LABS,PITTSBURGH,PA 15235
WESTINGHOUSE RES LABS,PITTSBURGH,PA 15235
CHOO, SC
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(02)
: 197
-
211
[8]
CHOO SC, 1973, IEEE T ELECTRON DEV, VED20, P418, DOI 10.1109/T-ED.1973.17664
[9]
MEASUREMENT OF CHARGE-CARRIER BEHAVIOR IN PIN DIODES USING A LASER TECHNIQUE
COOPER, RW
论文数:
0
引用数:
0
h-index:
0
COOPER, RW
PAXMAN, DH
论文数:
0
引用数:
0
h-index:
0
PAXMAN, DH
[J].
SOLID-STATE ELECTRONICS,
1978,
21
(06)
: 865
-
869
[10]
DEPENDENCE OF CARRIER MOBILITY IN SILICON ON CONCENTRATION OF FREE CHARGE-CARRIERS .1.
DANNHAUSER, F
论文数:
0
引用数:
0
h-index:
0
DANNHAUSER, F
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(12)
: 1371
-
+
←
1
2
3
→
共 22 条
[1]
AUGER-RECOMBINATION IN SI
BECK, JD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,PHYS INST,STUTTGART 1,WEST GERMANY
UNIV STUTTGART,PHYS INST,STUTTGART 1,WEST GERMANY
BECK, JD
CONRADT, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,PHYS INST,STUTTGART 1,WEST GERMANY
UNIV STUTTGART,PHYS INST,STUTTGART 1,WEST GERMANY
CONRADT, R
[J].
SOLID STATE COMMUNICATIONS,
1973,
13
(01)
: 93
-
95
[2]
SIMPLIFIED THEORY OF P-I-N-DIODE
BERZ, F
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
MULLARD RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
BERZ, F
[J].
SOLID-STATE ELECTRONICS,
1977,
20
(08)
: 709
-
714
[3]
BROOKS H, 1955, ADV ELECTRONICS ELEC, V7
[4]
RECOMBINATION IN THYRISTORS AND RECTIFIERS FROM SILICON - ITS EFFECT ON POROSITY FACTOR AND LIBERATION TIME RELATION
BURTSCHER, J
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,FRANKFURTER RING 152,8 MUNICH 46,FED REP GER
SIEMENS AG,FRANKFURTER RING 152,8 MUNICH 46,FED REP GER
BURTSCHER, J
DANNHAUSER, F
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,FRANKFURTER RING 152,8 MUNICH 46,FED REP GER
SIEMENS AG,FRANKFURTER RING 152,8 MUNICH 46,FED REP GER
DANNHAUSER, F
KRAUSSE, J
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,FRANKFURTER RING 152,8 MUNICH 46,FED REP GER
SIEMENS AG,FRANKFURTER RING 152,8 MUNICH 46,FED REP GER
KRAUSSE, J
[J].
SOLID-STATE ELECTRONICS,
1975,
18
(01)
: 35
-
63
[5]
CHOO SC, 1972, IEEE T ELECTRON DEV, VED19, P954
[6]
ANALYTICAL APPROXIMATIONS FOR DIFFUSED JUNCTIONS UNDER HIGH-LEVEL CONDITIONS
CHOO, SC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SINGAPORE,DEPT ELECT ENGN,SINGAPORE,SINGAPORE
CHOO, SC
YAMASAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SINGAPORE,DEPT ELECT ENGN,SINGAPORE,SINGAPORE
YAMASAKI, H
[J].
SOLID-STATE ELECTRONICS,
1976,
19
(09)
: 769
-
776
[7]
THEORY OF A FORWARD-BIASED DIFFUSED-JUNCTION P-L-N RECTIFIER .2. ANALYTICAL APPROXIMATIONS
CHOO, SC
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE RES LABS,PITTSBURGH,PA 15235
WESTINGHOUSE RES LABS,PITTSBURGH,PA 15235
CHOO, SC
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(02)
: 197
-
211
[8]
CHOO SC, 1973, IEEE T ELECTRON DEV, VED20, P418, DOI 10.1109/T-ED.1973.17664
[9]
MEASUREMENT OF CHARGE-CARRIER BEHAVIOR IN PIN DIODES USING A LASER TECHNIQUE
COOPER, RW
论文数:
0
引用数:
0
h-index:
0
COOPER, RW
PAXMAN, DH
论文数:
0
引用数:
0
h-index:
0
PAXMAN, DH
[J].
SOLID-STATE ELECTRONICS,
1978,
21
(06)
: 865
-
869
[10]
DEPENDENCE OF CARRIER MOBILITY IN SILICON ON CONCENTRATION OF FREE CHARGE-CARRIERS .1.
DANNHAUSER, F
论文数:
0
引用数:
0
h-index:
0
DANNHAUSER, F
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(12)
: 1371
-
+
←
1
2
3
→