ANALYTICAL APPROXIMATIONS FOR DIFFUSED JUNCTIONS UNDER HIGH-LEVEL CONDITIONS

[1] ACCURATE NUMERICAL STEADY-STATE SOLUTIONS FOR A DIFFUSED 1-DIMENSIONAL JUNCTION DIODE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 865 - +

[2] COMPUTER SIMULATION OF UHF-TRANSISTOR SMALL-SIGNAL BEHAVIOUR AT HIGH FREQUENCIES [J]. ELECTRONICS LETTERS, 1969, 5 (08) : 165 - &

[3] SPACE-CHARGE RECOMBINATION IN A FORWARD-BIASED DIFFUSED P-N JUNCTION [J]. SOLID-STATE ELECTRONICS, 1971, 14 (12) : 1201 - &

[4] ANALYTICAL APPROXIMATIONS FOR AN ABRUPT PN JUNCTION UNDER HIGH-LEVEL CONDITIONS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (07) : 793 - 799

[5] THEORY OF A FORWARD-BIASED DIFFUSED-JUNCTION P-L-N RECTIFIER .2. ANALYTICAL APPROXIMATIONS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (02) : 197 - 211

[6] CHOO SC, 1973, IEEE T ELECTRON DEV, VED20, P418, DOI 10.1109/T-ED.1973.17664

[7] INFLUENCE OF HEAVY DOPING ON EMITTER EFFICIENCY OF A BIPOLAR TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 833 - +

[8] JONSHER AK, 1960, PRINCIPLES SEMICONDU, P154

[9] ON MATHEMATICAL THEORY OF LINEARLY-GRADED P-N JUNCTION [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1967, 11 (03) : 252 - +

[10] HEAVY DOPING EFFECTS AND INJECTION EFFICIENCY OF SILICON TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (08) : 819 - 824

[1] ACCURATE NUMERICAL STEADY-STATE SOLUTIONS FOR A DIFFUSED 1-DIMENSIONAL JUNCTION DIODE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 865 - +

[2] COMPUTER SIMULATION OF UHF-TRANSISTOR SMALL-SIGNAL BEHAVIOUR AT HIGH FREQUENCIES [J]. ELECTRONICS LETTERS, 1969, 5 (08) : 165 - &

[3] SPACE-CHARGE RECOMBINATION IN A FORWARD-BIASED DIFFUSED P-N JUNCTION [J]. SOLID-STATE ELECTRONICS, 1971, 14 (12) : 1201 - &

[4] ANALYTICAL APPROXIMATIONS FOR AN ABRUPT PN JUNCTION UNDER HIGH-LEVEL CONDITIONS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (07) : 793 - 799

[5] THEORY OF A FORWARD-BIASED DIFFUSED-JUNCTION P-L-N RECTIFIER .2. ANALYTICAL APPROXIMATIONS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (02) : 197 - 211

[6] CHOO SC, 1973, IEEE T ELECTRON DEV, VED20, P418, DOI 10.1109/T-ED.1973.17664

[7] INFLUENCE OF HEAVY DOPING ON EMITTER EFFICIENCY OF A BIPOLAR TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 833 - +

[8] JONSHER AK, 1960, PRINCIPLES SEMICONDU, P154

[9] ON MATHEMATICAL THEORY OF LINEARLY-GRADED P-N JUNCTION [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1967, 11 (03) : 252 - +

[10] HEAVY DOPING EFFECTS AND INJECTION EFFICIENCY OF SILICON TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (08) : 819 - 824