HEAVY DOPING EFFECTS AND INJECTION EFFICIENCY OF SILICON TRANSISTORS

被引：29

作者：

MOCK, MS ^{[1
]}

机构：

[1] NYU,COURANT INST MATH SCI,NEW YORK,NY 10029

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 08期

关键词：

D O I：

10.1016/0038-1101(74)90030-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：819 / 824

页数：6

相关论文

共 17 条

[1] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD
CAUGHEY, DM
THOMAS, RE
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +
[2] DINGLE RB, 1955, PHILOS MAG, V46, P831
[3] GUMMEL HK, 1964, IEEE T, VED11, P455
[4] MAN HJJ, 1971, IEEE T ELECTRON DEV, V18, P833
[5] MERTENS RP, 1973, IEEE T ELECTRON DEVI, VED20, P772
[6] MEYER NI, 1958, ELECTRON COMMUN, V10, P305
[7] TRANSPORT EQUATIONS IN HEAVILY DOPED SILICON, AND CURRENT GAIN OF A BIPOLAR TRANSISTOR
MOCK, MS
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (11) : 1251 - 1259
[8] EQUATIONS DESCRIBING STEADY-STATE CARRIER DISTRIBUTIONS IN A SEMICONDUCTOR DEVICE
MOCK, MS
[J]. COMMUNICATIONS ON PURE AND APPLIED MATHEMATICS, 1972, 25 (06) : 781 - 792
[9] 2-DIMENSIONAL MATHEMATICAL-MODEL OF INSULATED-GATE FIELD-EFFECT TRANSISTOR
MOCK, MS
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (05) : 601 - 609
[10] COMPUTATION OF SEMICONDUCTOR DEVICE CURRENT CHARACTERISTICS BY FINITE-DIFFERENCE METHODS
MOCK, MS
[J]. JOURNAL OF ENGINEERING MATHEMATICS, 1973, 7 (03) : 193 - 205