SIMPLIFIED THEORY OF P-I-N-DIODE

被引：22

作者：

BERZ, F ^{[1
]}

机构：

[1] MULLARD RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 08期

关键词：

D O I：

10.1016/0038-1101(77)90048-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：709 / 714

页数：6

共 13 条

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[2]

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[3] THEORY OF A FORWARD-BIASED DIFFUSED-JUNCTION P-L-N RECTIFIER .2. ANALYTICAL APPROXIMATIONS [J].

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[4]

CHOO SC, 1973, IEEE T ELECTRON DEV, VED20, P418, DOI 10.1109/T-ED.1973.17664

[5] SPATIAL-DISTRIBUTION OF RECOMBINATION IN ALLOYED SILICON-PSN-RECTIFIERS BY LOADING IN A FORWARD DIRECTION [J].

DANNHAUSER, F ;

KRAUSSE, J .

SOLID-STATE ELECTRONICS, 1973, 16 (08) :861-873

[6] THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES [J].

FLETCHER, NH .

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[7]

Grekhov I. V., 1974, Radio Engineering and Electronic Physics, V19, P100

[8]

GREKHOV IV, 1975, SOV PHYS SEMICOND+, V8, P921

[9] FORWARD CHARACTERISTIC OF SILICON POWER RECTIFIERS AT HIGH CURRENT DENSITIES [J].

HERLET, A .

SOLID-STATE ELECTRONICS, 1968, 11 (08) :717-&

[10] DEPENDENCE OF CARRIER MOBILITY IN SILICON ON CONCENTRATION OF FREE CHARGE-CARRIERS .2. [J].

KRAUSSE, J .

SOLID-STATE ELECTRONICS, 1972, 15 (12) :1377-&

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