RECOMBINATION IN THYRISTORS AND RECTIFIERS FROM SILICON - ITS EFFECT ON POROSITY FACTOR AND LIBERATION TIME RELATION

被引：27

作者：

BURTSCHER, J ^{[1
]}

DANNHAUSER, F ^{[1
]}

KRAUSSE, J ^{[1
]}

机构：

[1] SIEMENS AG,FRANKFURTER RING 152,8 MUNICH 46,FED REP GER

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 01期

关键词：

D O I：

10.1016/0038-1101(75)90070-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：35 / 63

页数：29

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