Millisecond radiative recombination in poly(phenylene vinylene)-based light-emitting diodes from transient electroluminescence

被引:10
作者
Garcia-Belmonte, Germa [1 ]
Montero, Jose M.
Barea, Eva M.
Bisquert, Juan
机构
[1] Univ Jaume 1, Dept Fis, E-12071 Castellon de La Plana, Spain
[2] Univ Valencia, Inst Ciencia Mol, E-46980 Valencia, Spain
关键词
D O I
10.1063/1.2743741
中图分类号
O59 [应用物理学];
学科分类号
摘要
The current and electroluminescence transient responses of standard poly(phenylene vinylene)-based light-emitting devices have been investigated. The electroluminescence time response is longer (milliseconds scale) than the current switch-off time by more than one order of magnitude, in the case of small area devices (< 0.1 cm(2)). For large area devices (similar to 6 cm(2)) the electroluminescence decay time decreases from 1.45 ms to similar to 100 mu s with increasing bias voltage. The fast current decay limits the electroluminescence decay at higher voltages. Several approaches are discussed to interpret the observed slow decrease of electroluminescence after turning off the bias. One relies upon the Langevin-type bimolecular recombination kinetics which is governed by the minority carriers (electrons), and another focuses on the slow release of trapped electrons as possible explanations. Additionally, we show that the device current density is mainly determined by the transport of the fastest carriers (holes). (c) 2007 American Institute of Physics.
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页数:7
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