Semiconducting Cu3BiS3 thin films formed by the solid-state reaction of CuS and bismuth thin films

被引：75

作者：

Estrella, V ^{[1
]}

Nair, MTS ^{[1
]}

Nair, PK ^{[1
]}

机构：

[1] Univ Nacl Autonoma Mexico, Ctr Invest Energia, Dept Solar Energy Mat, Temixco 62580, Morelos, Mexico

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 02期

关键词：

D O I：

10.1088/0268-1242/18/2/322

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semiconducting thin films of Cu3BiS3, with structure and composition corresponding to that of the mineral wittichenite, have been prepared by heating at 300 degreesC in nitrogen atmosphere a chemically deposited CuS thin film on which a thin film of bismuth was thermally evaporated. This follows a stoichiometric reaction: CuS (300 nm) + Bi (103 nm) giving Cu3BiS3 (397 nm). The optical absorption coefficient in the visible region for this material is > 10(5) cm(-1). This optical absorption is classified as due to direct (forbidden) transitions, with an optical bandgap of 1.2 +/- 0.1 eV. Weak optical absorption related to an indirect (forbidden) gap of 0.65 eV is also identified. The Cu3BiS3 thin film has a p-type conductivity of 0.03 Ohm(-1) cm(-1) and is photoconductive. The mobility-lifetime product of photogenerated carriers is estimated to be 10(-6) cm(2) V-1.

引用

页码：190 / 194

页数：5