100 h II-VI blue-green laser diode

被引：228

作者：

Taniguchi, S

Hino, T

Itoh, S

Nakano, K

Nakayama, N

Ishibashi, A

Ikeda, M

机构：

[1] Sony Corporation Research Center, Hodogaya-ku, Yokohama, 240

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 06期

关键词：

II-VI semiconductors; semiconductor junction lasers; visible semiconductor lasers;

D O I：

10.1049/el:19960415

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By reducing the dark-spot density to <3 x 10(3)cm(-2), device lifetime exceeding 100h has been obtained for a ZnCdSe/ZnSSe/ZnMgSSe single quantum well separate-confinement heterostructure laser diode (LD) under room temperature continuous-wave operation with a constant light output power of 1mW. The threshold current density is 533A/cm(2) and the lasing wavelength is 514.7nm. Considering the dark-spot density, we have concluded that the failure of this LD is not caused by degradation from macroscopic defects such as stacking faults, but by recombination enhanced defect reaction.

引用

页码：552 / 553

页数：2

共 6 条

[1] CHUANG SL, UNPUB PHYS REV LETT
[2] ON DEGRADATION OF ZNSE-BASED BLUE-GREEN DIODE-LASERS
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[4] ISHIBASHI A, 1995, 7 INT C 2 6 COMP DEV
[5] GENERATION OF DEGRADATION DEFECTS, STACKING-FAULTS, AND MISFIT DISLOCATIONS IN ZNSE-BASED FILMS GROWN ON GAAS
KUO, LH
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04): : 1694 - 1704
[6] STRUCTURAL STUDY OF DEFECTS INDUCED DURING CURRENT INJECTION TO II-VI BLUE-LIGHT EMITTER
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ITOH, S
NAKANO, K
ISHIBASHI, A
[J]. APPLIED PHYSICS LETTERS, 1995, 66 (10) : 1208 - 1210

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