Microwave responses and general model of nanotetraneedle ZnO: Integration of interface scattering, microcurrent, dielectric relaxation, and microantenna

被引:57
作者
Fang, Xiao-Yong [1 ,2 ]
Cao, Mao-Sheng [2 ]
Shi, Xiao-Ling [2 ]
Hou, Zhi-Ling [2 ]
Song, Wei-Li [2 ]
Yuan, Jie [3 ]
机构
[1] Yanshan Univ, Sch Sci, Qinhuangdao 066004, Peoples R China
[2] Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
[3] Cent Univ Nationality, Sch Informat Engn, Beijing 100081, Peoples R China
基金
中国国家自然科学基金;
关键词
SINGLE-CRYSTAL NANORINGS; ABSORPTION PROPERTIES; OPTICAL-PROPERTIES; GROWTH-MECHANISM; 1ST-PRINCIPLES; EMISSION;
D O I
10.1063/1.3295912
中图分类号
O59 [应用物理学];
学科分类号
摘要
Based on the unique geometrical structure of nanotetra-ZnO needle (T-ZnON), we investigate the microwave responses of T-ZnON, including interface scattering, microcurrent attenuation, microantenna radiation, and dielectric relaxation, and build an energy attenuation model. The associated quantitative formula is deduced for calculating the microwave absorption properties of T-ZnON/SiO2 nanocomposite (T-ZnON/SiO2) in the range 8-14 GHz according to the present energy attenuation model. Very good agreement between the calculated and experimental results is obtained in a wide frequency range. The maximum deviation less than 0.5 dB in the range 8-14 GHz is obtained. Using the aforementioned model, we analyze the contribution of microwave responses to the energy attenuation in the frequency range 2-18 GHz, and the results reveal that interface scattering and microcurrent attenuation make the contribution most important. In addition, we calculate the effects of the volume fraction, conductivity, permittivity, needle length of T-ZnON, and thickness of T-ZnON/SiO2 on the reflectivity. The results show that the microwave absorption is evidently dependent on these effect factors, and the optimal microwave absorption band and the strongest microwave absorption peak of T-ZnON/SiO2 would appear when these physical parameters are changed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3295912]
引用
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页数:11
相关论文
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JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (18)