Measurement of phonon-exciton dephasing rate in GaN on sapphire by degenerate four wave mixing

被引：17

作者：

Pau, S ^{[1
]}

Kuhl, J

Scholz, F

Haerle, V

Khan, MA

Sun, CJ

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[2] Univ Stuttgart, Inst Phys 4, Kristallab, D-70550 Stuttgart, Germany

[3] APA Opt Inc, Blaine, MN 55449 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 05期

关键词：

D O I：

10.1063/1.120757

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The density and temperature dependence of the exciton dephasing time of two hexagonal GaN films on sapphire is measured using degenerate four-wave mixing (DFWM). The residual 4 ps dephasing time at low temperature and density is caused by exciton-impurity scattering. We present a theory of DFWM for various amount of inhomogeneous broadening. Good agreement of the temperature dependence of the dephasing time is found between theory and experiment. (C) 1998 American Institute of Physics.

引用

页码：557 / 559

页数：3

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