Shubnikov-de Haas oscillations near the metal-insulator transition in a two-dimensional electron system in silicon

被引：44

作者：

Kravchenko, SV

Shashkin, AA

Bloore, DA

Klapwijk, TM

机构：

[1] Delft Univ Technol, Dept Appl Phys, NL-2628 CJ Delft, Netherlands

[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 116卷 / 09期

基金：

美国国家科学基金会;

关键词：

disordered systems; electronic transport; quantum Hall effect;

D O I：

10.1016/S0038-1098(00)00361-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied Shubnikov-de Haas oscillations in a two-dimensional electron system in silicon at low electron densities. Near the metal-insulator transition, only 'spin' minima of the resistance at Landau-level filling factors v = 2, 6, 10, and 14 are seen, while the 'cyclotron' minima at v = 4, 8, and 12 disappear. A simple explanation of the observed behavior requires a giant enhancement of the spin splitting near the metal-insulator transition. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：495 / 499

页数：5

共 19 条

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