Thermal annealing effect on the crack development and the stability of 6,13-bis(triisopropylsilylethynyl)-pentacene field-effect transistors with a solution-processed polymer insulator

被引：69

作者：

Bae, Jin-Hyuk ^{[1
]}

Park, Jaehoon ^{[1
]}

Keum, Chang-Min ^{[1
]}

Kim, Won-Ho ^{[1
]}

Kim, Min-Hoi ^{[1
]}

Kim, Seul-Ong ^{[2
,3
]}

Kwon, Soon Ki ^{[2
,3
]}

Lee, Sin-Doo ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn 32, Seoul 151600, South Korea

[2] Gyeongsang Natl Univ, Sch Mat Sci & Engn, Chinju 660701, South Korea

[3] Gyeongsang Natl Univ, Engn Res Inst, Chinju 660701, South Korea

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 05期

关键词：

TIPS-pentacene FET; Solution-processed; Cracks; Trapping sites; THIN-FILM TRANSISTORS; HIGH-MOBILITY; PENTACENE;

D O I：

10.1016/j.orgel.2010.01.019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the thermal annealing effect on the mobility enhancement, the crack development, and the stability of 6,13-bis(triisopropylsilylethynyl) (TIPS)-pentacene field-effect transistors (FETs) with a solution-processed polymeric insulator. A high value of the field-effect mobility (0.401 cm(2)/V s) is achieved by thermally annealing the TIPS-pentacene FET at 60 degrees C which corresponds to the baking temperature of the TIPS-pentacene film. We demonstrate that thermal cracks, resulting primarily from side chains of the TIPS-pentacene, play a critical role on the degradation of the electrical properties of TIPS-pentacene FET, particularly in air under atmospheric pressure. The annealing effect is found to suppress both the development of the cracks and the increase of the off-current with time in the ambient environment. It is suggested that the cracks act as trapping sites of moisture and/or oxygen for the off-current flow and thus deteriorate the electrical performances of the TIPS-pentacene FET. (C) 2010 Elsevier B. V. All rights reserved.

引用

页码：784 / 788

页数：5

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