Metalorganic chemical vapor deposition of conductive CaRuO3 thin films

被引：24

作者：

Higashi, N ^{[1
]}

Okuda, N ^{[1
]}

Funakubo, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 5A期

关键词：

MOCVD; CaRuO3; conductive oxide; resistivity; perovskite structure; epitaxial; lattice mismatch;

D O I：

10.1143/JJAP.39.2780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CaRuO3 thin films expected for use as an electrode of ferroelectric random-access memory were prepared for the first time by metalorganic chemical vapor deposition (MOCVD) from the bis(dipivaloylmethanato)calcium(tetraen) [Ca(C11H29O2)(2)(C8H23N5)(x)]-tris(dipivaloylmethanato)ruthenium [Ru(C11H29O2)(3)]-O-2 and the bis(dipivaloylmethanato)calcium(tetraen) [Ca(C11H29O2)(2)(C8H23N5)(x)]-bis(ethylcyclipentadienyl)ruthenium Ru[(C5H4)(C2H5)](2)-O-2 systems. Epitaxial films were obtained on (100)LaAlO3 and (100)SrTiO3 substrates at 750 degrees C, while randomly oriented films were obtained on a (100)MgO substrate. The resistivity of these films was about 200 mu Omega.cm, and was confirmed to be independent of film thickness ranging from 70 to 300 nm. This value is lower than that of SrRuO3 thin films, about 280 mu Omega.cm.

引用

页码：2780 / 2783

页数：4

共 13 条

[1] ELECTRICAL PROPERTIES OF CARUO3 AND SRRUO3 SINGLE-CRYSTALS [J].