Degradation-free ferroelectric Pb(Zr,Ti)O3 thin film capacitors with IrO2 top electrode

被引：8

作者：

Fujisaki, Y ^{[1
]}

Kushida-Abdelghafar, K ^{[1
]}

Miki, H ^{[1
]}

Shimamoto, Y ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 185, Japan

来源：

INTEGRATED FERROELECTRICS | 1998年 / 21卷 / 1-4期

关键词：

ferroelectric capacitors; hydrogen; degradation; Pt; IrO(2); catalytic;

D O I：

10.1080/10584589808202053

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Degradation of ferroelectricity in PZT (Pb(Zr(0.52),Ti(0.48))O(3)) thin-film capacitors caused by heat treatment in a reductive ambience is investigated. We have found that the degradation of ferroelectricity depends upon the metal used for the top electrode of the PZT capacitor. The increased degradation in the case of a PZT capacitor with Pt electrodes can be explained by a catalytic reaction on the Pt surface. With the use of an IrO(2) non-catalytic top electrode, we have made the ferroelectricity of an IrO(2)/PZT/Pt capacitor retained even after the H(2) annealing at 400 degrees C, or above. This IrO(2)/PZT/Pt capacitor is a useful structure to avoid H(2) damage in actual LSI fabrication processes.

引用

页码：83 / 95

页数：13

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