Global changes of the band structure and the crystal lattice of Ga(N,As) due to hydrogenation -: art. no. 121206

The effect of hydrogenation on five GaNxAs1-x epitaxial layers (0.00043less than or equal toxless than or equal to0.019) grown by metal-organic vapor-phase epitaxy was investigated. Photomodulated reflectance (PR) and photoluminescence spectroscopy were used to study the electronic band structure, and x-ray diffraction (XRD) and Raman spectroscopy to probe, respectively, the static and dynamic properties of crystal lattice before and after hydrogenation. Hydrogen almost completely neutralizes the effect of N on the band structure of the GaAs host. The direct band gap E- and the spin-orbit split-off band E- +Delta(0) blueshift toward the corresponding energies in GaAs and the E+ band disappears after hydrogenation. The PR spectra of hydrogenated GaNxAs1-x resemble broad GaAs-like spectra. The XRD traces reveal that hydrogenation removes the tensile strain in GaNxAs1-x layers and even induces compressive strain. After hydrogenation the GaAs-like features in the Raman spectra persist whereas the local vibrational mode due to N disappears. Three H-related modes can be distinguished in the Raman spectra.