Hydrogen-induced passivation of nitrogen in GaAs1-yNy -: art. no. 235210

Nitrogen isoelectronic impurities in GaAs1-yNy are fully passivated by H irradiation from N dilute to the alloy limit. Photoluminescence measurements show that (i) for yless than or equal to0.001, exciton recombination lines in N-related complexes are fully quenched upon hydrogenation; (ii) for ygreater than or equal to0.01, the GaAs1-yNy band gap blueshifts toward that of the N-free material with increasing H dose. Thermal annealings restore the optical properties GaAs1-yNy had before hydrogenation. Finally, theoretical results on H equilibrium positions are reported and a mechanism for N passivation by H is given.