Design and characterization of a SiC Schottky diode mixer

被引：2

作者：

Eriksson, J ^{[1
]}

Ferdos, F

Zirath, H

Rorsman, N

机构：

[1] Chalmers Univ Technol, Microwave Elect Lab, Dept Microelect, SE-41296 Gothenburg, Sweden

[2] Chalmers Univ Technol, Dept Optoelect, SE-41296 Gothenburg, Sweden

[3] Ericsson Microwave Syst, SE-43184 Molndal, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

DC; high-level mixer; RF measurements; Schottky diodes; singly balanced mixer;

D O I：

10.4028/www.scientific.net/MSF.338-342.1207

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we present the work on a single balanced mixer with 4H-SiC Schottky diodes. DC and RF measurements are given for the circuit. The circuit gave a minimum conversion loss of 6.7 dB at 10 to 15 dBm LO input power. The conversion loss was below 10 dB for 0.7 to 1.4 GHz for a LO input power of 15 dBm.

引用

页码：1207 / 1210

页数：4