Effect of surface inhomogeneities on the electrical characteristics of SiC Schottky contacts

This paper reports analysis of the role of defects on the electrical characteristics of high-voltage 6H-SiC Schottky rectifiers. The measured reverse leakage current of high-voltage Ti and Pt rectifiers was found to he much higher than that predicted by thermionic emission theory and using a barrier height extracted from the C-Tb measurements. In this paper, a model based upon the presence of defects at the 6H-SiC/metal interface is used to explains this behavior, It is proposed that these defects result in lowering of the barrier height in the localized regions and thus, significantly affect the reverse I-V characteristics of the Schottky contacts. The presence of electrically active defects in the Schottky barrier area has been verified by EBIC studies.