Low-threshold and high-temperature characteristics of 1.3-μ m InGaAlAs MQW lasers grown by metalorganic vapor-phase epitaxy

被引：4

作者：

Tsuchiya, T ^{[1
]}

Takemoto, D ^{[1
]}

Sudou, T ^{[1
]}

Aoki, M ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ICIPRM.2000.850283

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the growth conditions of the InGaAlAs MQW structure. After optimal growth, ridge-stripe InGaAlAs lasers had a very low threshold current at high temperature (13 mA, 85 degrees C), a high characteristic temperature (91 K). Moreover, good reliability was obtained.

引用

页码：266 / 269

页数：4

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