A fully integrated SiGe bipolar 2.4 GHz Bluetooth voltage-controlled oscillator

被引：4

作者：

Klepser, BUH ^{[1
]}

Kucera, J ^{[1
]}

机构：

[1] Infineon Technol, D-81541 Munich, Germany

来源：

2000 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2000年

关键词：

D O I：

10.1109/RFIC.2000.854417

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 2.4GHz fully monolithic voltage-controlled oscillator for the Bluetooth wireless data communication standard is presented for the first time using a commercially available SiGe bipolar technology. An oscillator phase noise of -129 dBc/Hz is achieved at 3 MHz offset, with a tuning range of 500 MHz and a supply current of 6 mA at 3V.

引用

页码：61 / 64

页数：4

共 7 条

[1] Low power consumption and low phase noise 2.4GHz VCO using SiGe HBT for WLL application [J].