Relaxation bottleneck and its suppression in semiconductor microcavities

被引：138

作者：

Tartakovskii, AI ^{[1
]}

Emam-Ismail, M

Stevenson, RM

Skolnick, MS

Astratov, VN

Whittaker, DM

Baumberg, JJ

Roberts, JS

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia

[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[3] Toshiba Res Europe Ltd, Cambridge CB4 4WE, England

[4] Univ Southampton, Dept Phys & Astron, Southampton SO17 1BJ, Hants, England

[5] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

PHYSICAL REVIEW B | 2000年 / 62卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.62.R2283

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A polariton relaxation bottleneck is observed in angle-resolved measurements of photoluminescence emission from a semiconductor microcavity. For low power laser excitation, low k polariton states are found to have a very small population relative to those at high k. The bottleneck is found to be strongly suppressed at higher powers in the regime of superlinear emission of the lower polariton states. Evidence for the important role of carrier-carrier scattering in suppression of the bottleneck is presented.

引用

页码：R2283 / R2286

页数：4

共 16 条

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