Electrical and interfacial characteristics of ultrathin ZrO2 gate dielectrics on strain compensated SiGeC/Si heterostructure

被引：40

作者：

Mahapatra, R

Lee, JH

Maikap, S

Kar, GS

Dhar, A

Hwang, NM

Kim, DY

Mathur, BK

Ray, SK ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India

[2] Seoul Natl Univ, Sch Mat Sci & Engn, Ctr Microstruct Sci Mat, Seoul 151742, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 14期

关键词：

D O I：

10.1063/1.1566480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrathin ZrO2 gate dielectrics have been deposited on strain-compensated Si0.69Ge0.3C0.01 layers by rf magnetron sputtering. High-resolution transmission electron microscopy along with energy-dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy show the formation of a polycrystalline ZrO2 and an amorphous Zr-germano-silicate interfacial layer between the deposited oxide and SiGeC films. A dielectric constant of 17.5 for ZrO2 and 7.0 for an interfacial-silicate layer have been calculated from the high-frequency capacitance-voltage measurements. These dielectrics show an equivalent oxide thickness as low as 1.9 nm for ZrO2 and 2.0 nm for the interfacial silicate layer. An extremely low leakage current density of similar to9x10(-8) A/cm(2) at a gate voltage of -1.0 V, breakdown field of 7 MV/cm and moderate interface state density of 6x10(11) cm(-2) eV(-1) have been obtained for the fabricated capacitors. (C) 2003 American Institute of Physics.

引用

页码：2320 / 2322

页数：3

共 15 条

[1] Materials characterization of alternative gate dielectrics [J].