Preparation, structural characterization and ferroelectric properties of compensated Te-doped n=2 Aurivillius oxides ceramics

被引:21
作者
Durán-Martín, P
Jiménez, B
Millán, P
Castro, A
机构
[1] Swiss Fed Inst Technol, EPFL, Dept Mat, Ceram Lab, CH-1015 Lausanne, Switzerland
[2] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain
关键词
oxides; ferroelectricity; phase transitions;
D O I
10.1016/S0022-3697(00)00017-2
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
New solid solutions Bi2-xTexSrNb2-xBxOy (B = Zr, Hf; 0 less than or equal to x less than or equal to 0.5) and Bi(2-y)Te(y)Sr(1-y)A(y)Nb(2)O(9) (A = K; 0 less than or equal to y less than or equal to 0.25) have been synthesized and characterized by powder X-ray diffraction methods, thermal analysis and dielectric measurements. Evolution of the unit-cell parameters at room temperature shows that doping the A or B perovskite sites dominates the size of (001) plane in the structure, whereas the c value is largely influenced by the cations which occupy the bismuth position in its layer. Thermogravimetric studies show that these materials are stable up to 800 degrees C for x, y = 0.25 and 750 degrees C for x = 0.5. Differential thermal analysis curves of x = 0.25 compounds exhibit one exothermic peak at 400 and 500 degrees C fur zirconium and hafnium phases, respectively. This effect is related to the expansion of their network, without changing the symmetry or space group. All compositions are ferroelectric at room temperature, and exhibit a non-zero d(33) value after poling. Measurements of the dielectric permittivity as a function of the temperature reveal signs of at least two possible phase transitions. The disappearance of the induced spontaneous polarization when heating samples above the lower temperature anomaly in the dielectric permittivity clarifies the T-c value of the compounds. Assuming they are displacive-type ferroelectrics, it can be shown that the variation of T-c with the composition is an effect of the change of the unit cell size. This result offers the possibility of tailoring a ferroelectric material with the desired thermal working range. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1423 / 1431
页数:9
相关论文
共 34 条
[21]   STRUCTURE REFINEMENT OF COMMENSURATELY MODULATED BISMUTH STRONTIUM TANTALATE, BI2SRTA2O9 [J].
RAE, AD ;
THOMPSON, JG ;
WITHERS, RL .
ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1992, 48 :418-428
[22]  
RAMIREZ A, 1994, EUR J SOL STATE INOR, V31, P173
[23]   Substitution of lead into the bismuth oxide layers of the n=2- and n=3-Aurivillius phases [J].
Rentschler, T .
MATERIALS RESEARCH BULLETIN, 1997, 32 (03) :351-369
[24]   Synthesis and characterization of the Aurivillius phases Bi2-xPb(x)Sr(1-x)Nd(x)Nb(2)O(9) [J].
Rentschler, T ;
Karus, M ;
Wellm, A ;
Reller, A .
SOLID STATE IONICS, 1996, 90 (1-4) :49-55
[25]   Electronic structure of the ferroelectric layered perovskite SrBi2Ta2O9 [J].
Robertson, J ;
Chen, CW ;
Warren, WL ;
Gutleben, CD .
APPLIED PHYSICS LETTERS, 1996, 69 (12) :1704-1706
[26]  
RODRIGUEZCARVAJ.J, 1990, 15 C INT UN CRYST TO
[27]   PRESSURE AND TEMPERATURE DEPENDENCES OF DIELECTRIC PROPERTIES OF PEROVSKITES BATIO3 AND SRTIO3 [J].
SAMARA, GA .
PHYSICAL REVIEW, 1966, 151 (02) :378-&
[28]   REVISED EFFECTIVE IONIC-RADII AND SYSTEMATIC STUDIES OF INTERATOMIC DISTANCES IN HALIDES AND CHALCOGENIDES [J].
SHANNON, RD .
ACTA CRYSTALLOGRAPHICA SECTION A, 1976, 32 (SEP1) :751-767
[29]  
SMOLENSKII GA, 1954, ZH TEKH FIZ+, V24, P1751
[30]  
Strukov B.A., 1998, Ferroelectric Phenomena in Crystals: Physical Foundations