Resistance switching in HfO2 metal-insulator-metal devices

被引：115

作者：

Gonon, P. ^{[1
]}

Mougenot, M. ^{[1
]}

Vallee, C. ^{[1
]}

Jorel, C. ^{[1
]}

Jousseaume, V. ^{[2
]}

Grampeix, H. ^{[2
]}

El Kamel, F. ^{[3
]}

机构：

[1] Univ Grenoble 1, CNRS, French Natl Res Ctr, Microelect Technol Lab LTM, F-38054 Grenoble 9, France

[2] CEA LETI, MINATEC, F-38054 Grenoble 9, France

[3] El Manar Univ, Lab Org & Properties Mat LMOP, Tunis 1060, Tunisia

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 07期

关键词：

OXIDE-FILMS; MODEL; CHALLENGES; GROWTH;

D O I：

10.1063/1.3357283

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resistance switching is studied in Au/HfO2 (10 nm)/(Pt, TiN) devices, where HfO2 is deposited by atomic layer deposition. The study is performed using different bias modes, i.e., a sweeping, a quasistatic and a static (constant voltage stress) mode. Instabilities are reported in several circumstances (change in bias polarity, modification of the bottom electrode, and increase in temperature). The constant voltage stress mode allows extracting parameters related to the switching kinetics. This mode also reveals random fluctuations between the ON and OFF states. The dynamics of resistance switching is discussed along a filamentary model which implies oxygen vacancies diffusion. The rf properties of the ON and OFF states are also presented (impedance spectroscopy). (C) 2010 American Institute of Physics. [doi:10.1063/1.3357283]

引用

页数：9

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