Resistive switching effects of HfO2 high-k dielectric

被引：63

作者：

Chan, M. Y. ^{[1
,2
]}

Zhang, T. ^{[1
]}

Ho, V. ^{[2
]}

Lee, P. S. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[2] Chartered Semicond Mfg Ltd, Singapore 738406, Singapore

来源：

MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 12期

关键词：

Resistive switching; High-k dielectrics; Memory device;

D O I：

10.1016/j.mee.2008.09.021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Resistive switching behavior of HfO2 high-k dielectric has been studied as a promising candidate for emerging non-volatile memory technology. The low resistance ON state and high resistance OFF state can be reversibly altered under a low SET/RESET voltage of +/- 3 V. The memory device shows stable retention behavior with the resistance ratio between both states maintained greater than 103. The bipolar nature of the voltage-induced hysteretic switching properties suggests changes in film conductivity related to the formation and removal of electronically conducting paths due to the presence of oxygen vacancies induced by the applied electric field. The effect of annealing on the switching behavior was related to changes in compositional and structural properties of the film. A transition from bipolar to unipolar switching behavior was observed upon O-2 annealing which could be related to different natures of defect introduced in the film which changes the film switching parameters. The HfO2 resistive switching device offers a promising potential for high density and low power memory application with the ease of processing integration. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2420 / 2424

页数：5

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