Magnetoresistance of the double-tunnel-junction Coulomb blockade with magnetic metals

被引:66
作者
Majumdar, K
Hershfield, S
机构
[1] Univ Florida, Dept Phys, Gainesville, FL 32611 USA
[2] Univ Florida, Natl High Magnet Field Lab, Gainesville, FL 32611 USA
关键词
D O I
10.1103/PhysRevB.57.11521
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied the junction magnetoresistance (JMR) and the differential junction magnetoresistance (DJMR) for double tunnel junctions with magnetic metals in the Coulomb blockade regime. Spikes are seen in both the JMR and the DJMR vs voltage curves. They occur at those places where the current increases by a step. In all cases the large bias limit can be obtained by adding the resistances of each of the junctions in series. The JMR is positive in all the cases we studied, whereas the DJMR can be positive or negative as a function of the voltage. Moreover, the relative variation of the DJMR as a function of the voltage is larger than the variation of the JMR with the voltage.
引用
收藏
页码:11521 / 11526
页数:6
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