Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode

被引：148

作者：

Gelloz, B ^{[1
]}

Koshida, N ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Fac Technol, Dept Elect & Elect Engn, Tokyo 1848588, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 07期

关键词：

D O I：

10.1063/1.1290458

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly efficient electroluminescence (EL) is obtained at low operating voltage (< 5 V) from n(+)-type silicon-electrochemically oxidized thin porous silicon-indium-tin-oxide junctions. Continuous wave external quantum efficiency greater than 1% and power efficiency of 0.37% have been achieved. Considerable reduction of leakage current accounts for the enhancement of EL efficiency upon oxidation. The EL time response (approximate to 30 mu s) is slower than the photoluminescence one, due to slow electrical charging of porous silicon. No degradation of quantum efficiency is observed during operation and upon aging. This is attributed to the electrochemically grown oxide, which should provide a better surface passivation than the initial hydrogen coverage. (C) 2000 American Institute of Physics. [S0021-8979(00)01020-3].

引用

页码：4319 / 4324

页数：6

共 17 条

[1] ATMOSPHERIC IMPREGNATION OF POROUS SILICON AT ROOM-TEMPERATURE [J].

CANHAM, LT ;

HOULTON, MR ;

LEONG, WY ;

PICKERING, C ;

KEEN, JM .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) :422-431

[2] Anodic oxidation of p- and p(+)-type porous silicon: Surface structural transformations and oxide formation [J].

Cantin, JL ;

Schoisswohl, M ;

Grosman, A ;

Lebib, S ;

Ortega, C ;

vonBardeleben, HJ ;

Vazsonyi, E ;

Jalsovszky, G ;

Erostyak, J .

THIN SOLID FILMS, 1996, 276 (1-2) :76-79

[3]

COX TI, 1997, EMIS DATAREVIEWS SER, V18, P290

[4] Enhancement of the quantum efficiency and stability of electroluminescence from porous silicon by anodic passivation [J].

Gelloz, B ;

Nakagawa, T ;

Koshida, N .

APPLIED PHYSICS LETTERS, 1998, 73 (14) :2021-2023

[5] Enhancing the external quantum efficiency of porous silicon leds beyond 1% by a post-anodization electrochemical oxidation [J].

Gelloz, B ;

Nakagawa, T ;

Koshida, N .

MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS-1998, 1999, 536 :15-20

[6] Conduction in porous silicon contacted by a liquid phase [J].

Gelloz, B ;

Bsiesy, A ;

Gaspard, F ;

Muller, F .

THIN SOLID FILMS, 1996, 276 (1-2) :175-178

[7] VISIBLE ELECTROLUMINESCENCE FROM POROUS SILICON [J].

KOSHIDA, N ;

KOYAMA, H .

APPLIED PHYSICS LETTERS, 1992, 60 (03) :347-349

[8] Time-resolved electroluminescence of porous silicon [J].

Kozlowski, F ;

Sailer, C ;

Steiner, P ;

Knoll, B ;

Lang, W .

THIN SOLID FILMS, 1996, 276 (1-2) :164-167

[9] ELECTROLUMINESCENT PERFORMANCE OF POROUS SILICON [J].

KOZLOWSKI, F ;

SAUTER, M ;

STEINER, P ;

RICHTER, A ;

SANDMAIER, H ;

LANG, W .

THIN SOLID FILMS, 1992, 222 (1-2) :196-199

[10] Characterization of a porous silicon diode with efficient and tunable electroluminescence [J].

Lalic, N ;

Linnros, J .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (10) :5971-5977

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