Atomic and electronic structure of mixed and partial dislocations in GaN

被引:51
作者
Arslan, I
Bleloch, A
Stach, EA
Browning, ND
机构
[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
[2] SERC, Daresbury Lab, UK SuperSTEM, Warrington WA4 4AD, Cheshire, England
[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA
[4] Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
[5] Univ Calif Davis, Dept Chem Engn & Mat Sci, Davis, CA 95616 USA
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1103/PhysRevLett.94.025504
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Here we present a detailed study of mixed dislocations in GaN, in which the complexities of the atomic arrangement in the cores have been imaged directly for the first time using an aberration corrected scanning transmission electron microscope. In addition to being present as a full-core structure, the mixed dislocation is observed to dissociate into partial dislocations separated by a stacking fault only a few unit cells in length. The generation of this stacking fault appears to be impurity driven and its presence is consistent with theoretical predictions for dislocation dissociation in materials with hexagonal crystal symmetry.
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页数:4
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