Nanowire Photodetectors

被引:349
作者
Soci, Cesare [1 ]
Zhang, Arthur [1 ]
Bao, Xin-Yu [1 ]
Kim, Hongkwon [1 ]
Lo, Yuhwa [1 ]
Wang, Deli [1 ]
机构
[1] Univ Calif San Diego, Dept Elect & Comp Engn, Jacobs Sch Engn, La Jolla, CA 92093 USA
基金
美国国家科学基金会;
关键词
Nanowire; Photodetector; Gain; SCALE HIERARCHICAL ORGANIZATION; III-V NANOWIRES; ZNO NANOWIRES; ULTRAVIOLET PHOTODETECTORS; OPTOELECTRONIC PROPERTIES; ELECTRONIC TRANSPORT; OPTICAL-PROPERTIES; SILICON NANOWIRES; NANOROD ARRAYS; SURFACE-STATES;
D O I
10.1166/jnn.2010.2157
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The use of nanowires and nanowire structures as photodetectors is an emerging research topic. Despite the large amount of reports on nanowire photoresponse that appeared in the literature over the last decade, the mechanism leading to high photosensitivity and photoconductive gain in high aspect ratio nanostructures has been elucidated only recently. Novel device architectures integrated in single nanowire devices are also being actively studied and developed. In this article, the general nanowire photodetector concepts are reviewed, together with a detailed description of the physical phenomena occurring in nanowire photoconductors and phototransistors, with some examples from recent experimental results obtained in our groups. An outlook on future directions toward the use of semiconductor nanowire photoconductors as intrachip interconnects, single-photon detectors, and image sensors, is also given.
引用
收藏
页码:1430 / 1449
页数:20
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