Heteroepitaxial Growth of Vertical GaAs Nanowires on Si (111) Substrates by Metal-Organic Chemical Vapor Deposition

被引：93

作者：

Bao, Xin-Yu ^{[1
]}

Soci, Cesare ^{[1
]}

Susac, Darija ^{[3
]}

Bratvold, Jon ^{[3
]}

Aplin, David P. R. ^{[1
]}

Wei, Wei ^{[2
]}

Chen, Ching-Yang ^{[1
]}

Dayeh, Shadi A. ^{[1
]}

Kavanagh, Karen L. ^{[3
]}

Wang, Deli ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[2] Univ Calif San Diego, Mat Sci Program, La Jolla, CA 92093 USA

[3] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

来源：

NANO LETTERS | 2008年 / 8卷 / 11期

基金：

加拿大自然科学与工程研究理事会; 美国国家科学基金会;

关键词：

D O I：

10.1021/nl802062y

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Epitaxial growth of vertical GaAs nanowires on Si (111) substrates is demonstrated by metal-organic chemical vapor deposition via a vapor-liquid-solid growth mechanism. Systematic experiments indicate that substrate pretreatment, pregrowth alloying temperature, and growth temperature are all crucial to vertical epitaxial growth. Nanowire growth rate and morphology can be well controlled by the growth temperature, the metal-organic precursor molar fraction, and the molar V/III ratio. The as-grown GaAs nanowires have a predominantly zinc-blende crystal structure along a < 111 > direction. Crystallographic {111} stacking faults found perpendicular to the growth axis could be almost eliminated via growth at high V/III ratio and low temperature. Single nanowire field effect transistors based on unintentionally doped GaAs nanowires were fabricated and found to display a strong effect of surface states on their transport properties.

引用

页码：3755 / 3760

页数：6

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