III-V nanowire growth mechanism: V/III ratio and temperature effects

被引:157
作者
Dayeh, Shadi A. [1 ]
Yu, Edward T. [1 ]
Wang, Deli [1 ]
机构
[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
关键词
D O I
10.1021/nl0712668
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We have studied the dependence of Au-assisted InAs nanowire (NW) growth on InAs(111)B substrates as a function of substrate temperature and input V/III precursor ratio using organometallic vapor-phase epitaxy. Temperature-dependent growth was observed within certain temperature windows that are highly dependent on input V/III ratios. This dependence was found to be a direct consequence of the drop in NW nucleation and growth rate with increasing V/III ratio at a constant growth temperature due to depletion of indium at the NW growth sites. The growth rate was found to be determined by the local V/III ratio, which is dependent on the input precursor flow rates, growth temperature, and substrate decomposition. These studies advance understanding of the key processes involved in III-V NW growth, support the general validity of the vapor-liquid-solid growth mechanism for III-V NWs, and improve rational control over their growth morphology.
引用
收藏
页码:2486 / 2490
页数:5
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