GAAS WHISKERS GROWN BY A THERMAL-DECOMPOSITION METHOD

被引：19

作者：

KASAHARA, J ^{[1
]}

KAJIWARA, K ^{[1
]}

YAMADA, T ^{[1
]}

机构：

[1] SONY CORP,RES CTR,HODOGAYA KU,YOKOHAMA,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1977年 / 38卷 / 01期

关键词：

D O I：

10.1016/0022-0248(77)90368-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：23 / 28

页数：6

共 7 条

[1] NEW TYPE OF GALLIUM ARSENIDE WHISKERS [J].

ADDAMIAN.A ;

DAVEY, JE .

JOURNAL OF CRYSTAL GROWTH, 1971, 10 (02) :194-&

[2] COILED CRYSTALS OF GALLIUM-ARSENIDE [J].

ADDAMIANO, A .

JOURNAL OF CRYSTAL GROWTH, 1971, 11 (03) :351-+

[3] WHISKER CRYSTALS OF GALLIUM ARSENIDE AND GALLIUM PHOSPHIDE GROWN BY VAPOR-LIQUID-SOLID MECHANISM [J].

BARNS, RL ;

ELLIS, WC .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (07) :2296-&

[4] QUANTITATIVE STUDY ON GROWTH OF SILICON WHISKERS FROM SILANE AND GERMANIUM WHISKERS FROM GERMANE [J].

BOOTSMA, GA ;

GASSEN, HJ .

JOURNAL OF CRYSTAL GROWTH, 1971, 10 (03) :223-&

[5] FUNDAMENTAL ASPECTS OF VLS GROWTH [J].

GIVARGIZOV, EI .

JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :20-30

[6] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM [J].

MANASEVIT, HM ;

ERDMANN, FM ;

SIMPSON, WI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1864-+

[7] VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH ( NEW METHOD GROWTH CATALYSIS FROM IMPURITY WHISKER EPITAXIAL + LARGE CRYSTALS SI E ) [J].

WAGNER, RS ;

ELLIS, WC .

APPLIED PHYSICS LETTERS, 1964, 4 (05) :89-&

← 1 →