Excess indium and substrate effects on the growth of InAs nanowires

被引：33

作者：

Dayeh, Shadi A. ^{[1
]}

Yu, Edward T. ^{[1
]}

Wang, Deli ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

SMALL | 2007年 / 3卷 / 10期

关键词：

chemical vapor deposition; indium; nanoparticles; nanowires;

D O I：

10.1002/smll.200700338

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The nucleation and growth of semiconducting indium arsenide (InAs) nanowires from excess In and without Au nanoparticles were studied. Indium arsenide (InAs) nanowires were synthesized in a horizontal metal-organic chemical vapor deposition (MOCVD) system using Arsine (AsH3) and trimethyllindium (TMIn) precursors in H2 carrier gas at a chamber pressure of 100 Torr. It was observed that the lengths of the nanowire increase as the TMIn flow rate is increased, although with different morphology. Also, the concentration of In adatoms at the surface of the substrate will increase as the TMIn flow rate increases. The effect of excess In was also observed during nanowire growth under identical growth conditions. Short nanowires with flat tips or needlelike nanowires were formed due to In consumption during growth.

引用

页码：1683 / 1687

页数：5

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