Epitaxial growth and ultraviolet photoluminescence of CaF2/ZnO/CaF2 heterostructures on Si(111)

被引：15

作者：

Watanabe, M ^{[1
]}

Maeda, Y ^{[1
]}

Okano, S ^{[1
]}

机构：

[1] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2000年 / 39卷 / 6A期

关键词：

ultraviolet emission; photoluminescence; ZnO; CaF2; sputtering; silicon substrate;

D O I：

10.1143/JJAP.39.L500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The epitaxial growth of zinc oxide (ZnO) nanocrystals embedded in a single-crystalline CaF2 layer on a Si(111) substrate has been demonstrated. Highly c-axis-oriented ZnO 4-10 nm thick: was grown on a CaF2(111) layer using radio-frequency (RF) sputtering followed by annealing in ultrahigh vacuum, resulting in the formation of epitaxial self-organized ZnO nanocrystals on CaF2/Si(111). It was found that CaF2 can be grown epitaxially over ZnO/CaF2 by molecular beam epitaxy (MBE), thus the CaF2/ZnO/CaF2 heterostructure has been formed on a Si(111) substrate. Abrupt heterointerfaces between CaF2 and ZnO were confirmed on a transmission electron microscope (TEM) cross section, and ultraviolet (UV) photoluminescence (PL) corresponding to the band-gap energy of ZnO was dominant in PL spectra observed at room temperature.

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页码：L500 / L502

页数：3

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