Degradation of precision reference devices in space environments

被引：30

作者：

Rax, BG ^{[1
]}

Lee, CI ^{[1
]}

Johnston, AH ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1997年 / 44卷 / 06期

关键词：

D O I：

10.1109/23.658965

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The degradation of precision reference devices is investigated to determine the relative importance of ionization and displacement damage. The results are compared with theoretical calculations of a basic bandgap reference circuit. Several of the device types were degraded severely at 20 krad(Si), with about the same degradation as that predicted for the basic bandgap reference circuit. One very high precision device with an internal heater performed far better than any of the other devices in the study.

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页码：1939 / 1944

页数：6

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