A novel method for the synthesis of the ternary thin film semiconductor cadmium zinc sulfide from acidic chemical baths

被引：24

作者：

Boyle, DS

Robbe, O

Halliday, DP

Heinrich, MR

Bayer, A

O'Brien, P

Otway, DJ

Potter, MDG

机构：

[1] Univ Manchester, Manchester Mat Sci Ctr, Manchester M13 9PL, Lancs, England

[2] Univ Manchester, Dept Chem, Manchester M13 9PL, Lancs, England

[3] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AY, England

[4] Univ Durham, Sci Labs, Dept Phys, Durham DH1 3LE, England

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2000年 / 10卷 / 11期

关键词：

Cadmium zinc sulfide; Chemical bath deposition; Thin film;

D O I：

10.1039/b005544l

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The deposition of ternary materials such as Cd(1 - x)Zx(n)S by chemical bath methods is a problem due to differing hydrolytic stabilities of the two metals. A novel approach to the deposition of this material has been developed in which moderately acidic baths are used.

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页码：2439 / 2441

页数：3

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