Peculiarities in the mechanism of current flow through an ohmic contact to gallium phosphide

被引：24

作者：

Blank, TV ^{[1
]}

Goldberg, YA ^{[1
]}

Konstantinov, OV ^{[1
]}

Nikitin, VG ^{[1
]}

Posse, EA ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2004年 / 30卷 / 10期

关键词：

D O I：

10.1134/1.1813716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of the electric resistance of the In-GaP ohmic contact has been studied in the range from 77 to 420 K. The resistance was measured in GaP plates of various thickness with two In ohmic contacts. The measured ohmic contact resistance increases with temperature in the interval from 230- 420 K. It is suggested that the In-GaP ohmic contact is formed by metallic shunts appearing upon deposition of In atoms on dislocations and other imperfections present (with a density evaluated at (4.5-8) x 10(7) cm(-2)) in the subsurface region of the semiconductor. (C) 2004 MAIK "Nauka / Interperiodica".

引用

页码：806 / 809

页数：4

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