TRANSPORT MECHANISMS IN LOW-RESISTANCE OHMIC CONTACTS TO P-INP FORMED BY RAPID THERMAL ANNEALING

被引：11

作者：

CLAUSEN, T

LEISTIKO, O

机构：

[1] Mikroelektronik Centret, Technical University of Denmark, Build. 348

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 10期

关键词：

D O I：

10.1063/1.108757

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermionic emission across a very small effective Schottky barrier (0-0.2 eV) are reported as being the dominant transport process mechanism in very low-resistance ohmic contacts for conventional AuZn(Ni) metallization systems top-InP formed by rapid thermal annealing. The barrier modulation process is related to interdiffusion and compound formation between the metal elements and the InP. The onset of low specific contact resistance is characterized by a change in the dominant transport mechanism; from predominantly a combination of thermionic emission and field emission to purely thermionic emission.

引用

页码：1108 / 1109

页数：2

共 6 条

[1] THE ADDITION OF NI IN AUZN GATE OHMIC CONTACTS FOR INP JUNCTION FIELD-EFFECT TRANSISTORS [J].