THE ADDITION OF NI IN AUZN GATE OHMIC CONTACTS FOR INP JUNCTION FIELD-EFFECT TRANSISTORS

被引：7

作者：

BOOS, JB

KRUPPA, W

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.584775

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：502 / 504

页数：3

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