MONOLITHIC INTEGRATION OF INGAAS P-I-N PHOTODETECTOR WITH FULLY ION-IMPLANTED INP JFET AMPLIFIER

被引：34

作者：

KIM, SJ ^{[1
]}

GUTH, G ^{[1
]}

VELLACOLEIRO, GP ^{[1
]}

SEABURY, CW ^{[1
]}

SPONSLER, WA ^{[1
]}

RHOADES, BJ ^{[1
]}

机构：

[1] AT&T MICROELECTR,READING,PA 19604

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 09期

关键词：

D O I：

10.1109/55.6941

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：447 / 449

页数：3

共 11 条

[1] CHENG C, IN PRESS IEEE T ELEC
[2] PLANAR INGAAS/INP PINFET FABRICATED BY BE ION-IMPLANTATION
HATA, S
IKEDA, M
AMANO, T
MOTOSUGI, G
KURUMADA, K
[J]. ELECTRONICS LETTERS, 1984, 20 (22) : 947 - 948
[3] INOMOTO Y, 1988, JAN OPT FIB COMM C N
[4] MONOLITHICALLY INTEGRATED IN0.53GA0.47AS-PIN/INP-MISFET PHOTORECEIVER
KASAHARA, K
HAYASHI, J
MAKITA, K
TAGUCHI, K
SUZUKI, A
NOMURA, H
MATUSHITA, S
[J]. ELECTRONICS LETTERS, 1984, 20 (08) : 314 - 315
[5] A LOW-POWER HIGH-SPEED ION-IMPLANTED JFET FOR INP-BASED MONOLITHIC OPTOELECTRONIC ICS
KIM, SJ
WANG, KW
VELLACOLEIRO, GP
LUTZE, JW
OTA, Y
GUTH, G
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (11) : 518 - 520
[6] INTEGRATED AMPLIFIERS USING FULLY ION-IMPLANTED INP JFETS WITH HIGH TRANSCONDUCTANCE
KIM, SJ
GUTH, G
VELLACOLEIRO, GP
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (06) : 306 - 308
[7] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER
LEHENY, RF
NAHORY, RE
POLLACK, MA
BALLMAN, AA
BEEBE, ED
DEWINTER, JC
MARTIN, RJ
[J]. ELECTRONICS LETTERS, 1980, 16 (10) : 353 - 355
[8] GROWTH OF FE-DOPED SEMI-INSULATING INP BY MOCVD
LONG, JA
RIGGS, VG
JOHNSTON, WD
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (01) : 10 - 14
[9] HIGH-SPEED INP/GA0.47IN0.53AS SUPERLATTICE AVALANCHE PHOTODIODES WITH VERY LOW BACKGROUND DOPING GROWN BY CONTINUOUS TRICHLORIDE VAPOR-PHASE EPITAXY
MATTERA, VD
CAPASSO, F
ALLAM, J
HUTCHINSON, AL
DICK, J
BROWN, JM
WESTPHAL, A
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2609 - 2612
[10] MONOLITHIC INTEGRATION OF A PLANAR EMBEDDED INGAAS P-I-N DETECTOR WITH INP DEPLETION-MODE FETS
TELL, B
LIAO, ASH
BROWNGOEBELER, KF
BRIDGES, TJ
BURKHARDT, G
CHANG, TY
BERGANO, NS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2319 - 2321

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