HIGH-SPEED INP/GA0.47IN0.53AS SUPERLATTICE AVALANCHE PHOTODIODES WITH VERY LOW BACKGROUND DOPING GROWN BY CONTINUOUS TRICHLORIDE VAPOR-PHASE EPITAXY

被引：12

作者：

MATTERA, VD

CAPASSO, F

ALLAM, J

HUTCHINSON, AL

DICK, J

BROWN, JM

WESTPHAL, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 07期

关键词：

D O I：

10.1063/1.337129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2609 / 2612

页数：4

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