ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN GAAS-ALXGA1-XAS SUPERLATTICES

被引：48

作者：

JUANG, FY

DAS, U

NASHIMOTO, Y

BHATTACHARYA, PK

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 09期

关键词：

D O I：

10.1063/1.95948

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：972 / 974

页数：3

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[1] [Anonymous], 1977, SEMICONDUCTORS SEMIM
[2] EXPERIMENTAL-DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GAAS
BULMAN, GE
ROBBINS, VM
BRENNAN, KF
HESS, K
STILLMAN, GE
[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) : 181 - 185
[3] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO
CAPASSO, F
TSANG, WT
HUTCHINSON, AL
WILLIAMS, GF
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 38 - 40
[4] STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO
CAPASSO, F
TSANG, WT
WILLIAMS, GF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) : 381 - 390
[5] BAND-GAP ENGINEERING VIA GRADED GAP, SUPER-LATTICE, AND PERIODIC DOPING STRUCTURES - APPLICATIONS TO NOVEL PHOTODETECTORS AND OTHER DEVICES
CAPASSO, F
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 457 - 461
[6] DAVID JPR, 1985, I PHYS C SER, V74, P247
[7] QUANTUM-WELL HETEROSTRUCTURE LASERS
HOLONYAK, N
KOLBAS, RM
DUPUIS, RD
DAPKUS, PD
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 170 - 186
[8] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES
MCINTYRE, RJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 164 - +
[9] BAND-STRUCTURE DEPENDENCE OF IMPACT IONIZATION BY HOT CARRIERS IN SEMICONDUCTORS - GAAS
PEARSALL, T
CAPASSO, F
NAHORY, RE
POLLACK, MA
CHELIKOWSKY, JR
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 297 - 302
[10] A MODEL FOR IMPACT IONIZATION IN WIDE-GAP SEMICONDUCTORS
RIDLEY, BK
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (23): : 4733 - 4751