PLANAR INGAAS/INP PINFET FABRICATED BY BE ION-IMPLANTATION

被引：12

作者：

HATA, S

IKEDA, M

AMANO, T

MOTOSUGI, G

KURUMADA, K

机构：

[1] NTT, Atsugi Electrical Communication, Lab, Atsugi, Jpn, NTT, Atsugi Electrical Communication Lab, Atsugi, Jpn

来源：

关键词：

D O I：

10.1049/el:19840644

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：947 / 948

页数：2

共 6 条

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[2] ASAI K, 1980, 12TH P C SOL STAT DE, P235
[3] BACKGROUND CARRIER CONCENTRATION AND ELECTRON-MOBILITY IN LPE IN1-XGAXASYP1-Y LAYERS
GREENE, PD
WHEELER, SA
ADAMS, AR
ELSABBAHY, AN
AHMAD, CN
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 78 - 80
[4] INOUE K, 1983, 4TH INT C INT OPT OP, P186
[5] KASAHARA K, 1983, 4TH INT C INT OPT OP, P188
[6] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER
LEHENY, RF
NAHORY, RE
POLLACK, MA
BALLMAN, AA
BEEBE, ED
DEWINTER, JC
MARTIN, RJ
[J]. ELECTRONICS LETTERS, 1980, 16 (10) : 353 - 355