INTEGRATED AMPLIFIERS USING FULLY ION-IMPLANTED INP JFETS WITH HIGH TRANSCONDUCTANCE

被引：16

作者：

KIM, SJ

GUTH, G

VELLACOLEIRO, GP

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 06期

关键词：

D O I：

10.1109/55.725

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：306 / 308

页数：3

相关论文

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