LOW RESISTANCE OHMIC CONTACTS TO NORMAL-INP AND PARA-INP

被引:112
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KUPHAL, E
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10.1016/0038-1101(81)90214-8
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:69 / &
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共 27 条
[1]   INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH [J].
ASTLES, MG ;
SMITH, FGH ;
WILLIAMS, EW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) :1750-1757
[2]   BARRIER-FREE CONTACTS ON INDIUM PHOSPHIDE [J].
BECKER, R .
SOLID-STATE ELECTRONICS, 1973, 16 (11) :1241-1249
[3]   OHMIC CONTACTS FOR GAAS DEVICES [J].
COX, RH ;
STRACK, H .
SOLID-STATE ELECTRONICS, 1967, 10 (12) :1213-+
[4]   CHARACTERIZATION OF OHMIC CONTACTS TO INP [J].
ERICKSON, LP ;
WASEEM, A ;
ROBINSON, GY .
THIN SOLID FILMS, 1979, 64 (03) :421-426
[5]   CONTACT RESISTANCE IN METAL-SEMICONDUCTOR SYSTEMS [J].
FANG, YK ;
CHANG, CY ;
SU, YK .
SOLID-STATE ELECTRONICS, 1979, 22 (11) :933-938
[6]  
FRITZSCHE D, 1980, I PHYS C SER, V50, P258
[7]   ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J].
HSIEH, JJ .
APPLIED PHYSICS LETTERS, 1976, 28 (05) :283-285
[8]   GAINASP-INP AVALANCHE PHOTO-DIODES [J].
HURWITZ, CE ;
HSIEH, JJ .
APPLIED PHYSICS LETTERS, 1978, 32 (08) :487-489
[9]  
Kellner W., 1975, Siemens Forschungs- und Entwicklungsberichte, V4, P137
[10]  
KUPHAL E, 1979, DBP65TBR20 FTZ FORSC